NTD4809NH-1G中文资料(3)

元器件交易网

NTD4809NH

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

DRAIN SOURCE DIODE CHARACTERISTICSForward Diode Voltage

VSD

VGS = 0 V,IS = 30 A

TJ = 25°CTJ = 125°C

0.950.8315.6

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 30 A

10.65.07.5

nCns

1.2

V

Symbol

Test Condition

Min

Typ

Max

Unit

Reverse Recovery TimeCharge TimeDischarge TimeReverse Recovery TimePACKAGE PARASITIC VALUESSource InductanceDrain Inductance, DPAKDrain Inductance, IPAKGate InductanceGate Resistance

tRRtatbQRR

LSLDLDLGRG

TA = 25°C

2.490.01641.883.460.75

nH

W