半导体激光器改进电路模型的大信号验证(3)

摇第1期田学农,高建军:半导体激光器改进电路模型的大信号验证57

Fig.

performance4.

oftheinputportofthelaserisshowninFig.Fig.54摇comparesMeasuedtheandmodeledsimulatedandI-Vcharacteristics

coefficientmeasuredreflection

30forthelaserinthefrequencyrangethatGHzunderthebiascurrentof20mA.Itcan0.be1GHz-conventionaltheimprovedmodels,modelespeciallyismore

fortheaccuratemagnitudethanfoundtheofthe

Fig.5摇Comparisonofmodeledandmeasured

reflectionFig.6coefficientshowsreflectiontheofvariationcoefficientthelaserofforthethelaser

withmagnitudedifferentofbias

the

Fig.6摇theComparisonlaseratdifferentofbiasconditions

coefficientfor

currentsshown3摇increasesthatusingConclusions

withthetheproposedmodelinthispaper.Itisthemagnitudeincreasingofofthethereflectionbiascurrents.

coefficientGaoisAnrealizedimplementationusingtheofSDDthelasercomponentmodelinproposedADS.Theby

convergencetheconventionalofcounterpart.theimplementationSimulationisresultsmorerobustshowthan

that

reflectionmodelagreesrange

coefficientwellwithofthethemeasuredresultsandtheconventionalcan

models.be

more

Itisaccurately

lasersinthefirstpublishedsimulated

lowfrequencythelargesignalverificationofGao爷smodelresultthan

aswe

ofknow.fortheThedesigncharacterizationproposedimplementationofopto鄄electricalofthewouldbehelpfulsystemssemiconductorsuchaslasersradioover

andfibertheAcknowledgement

applications.

LaboratoryThisworkwassupportedbytheStateKey

andNetworksof,AdvancedShanghaiOpticalJiaoTongCommunicationUniversity,China.SystemsReferences:

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